EPC2019

Manufacturer Part	EPC2019
Manufacturer	EPC
Description	GANFET N-CH 200V 8.5A DIE
Category	Discrete Semiconductor Products
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	-

Type	Description
Product Status:	Active
FET Type:	N-Channel
Technology:	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	5V
Rds On (Max) @ Id, Vgs:	42mOhm @ 7A, 5V
Vgs(th) (Max) @ Id:	2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:	2.9 nC @ 5 V
Vgs (Max):	+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds:	288 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	Die
Package / Case:	Die

We provide 90 days warranty;
The Pre-Shipment Inspection (PSI) will be applied;
If some of the items you received aren't of perfect quality, we would responsibly arrange your refund or replacement. But the items must remain their original condition;
If you don't receive the item in 25 days, just let us know, a new package or replacement will be issued.
If your item is significantly different from our product description, you can A: Return it and get a full refund, or B: Get a partial refund and keep the item.
Taxes & VAT will not be included;